As for thin film applications, dielectric thin film-based energy storage enables the application for flexible and miniatured electronic devices such as sensors and actuators.
The recoverable energy storage density of AgNbO 3 films indicates good temperature stability with a variation of < 10% between 30 ℃ and 150 ℃ and good frequency
PbZrO 3 (PZO) demonstrates outstanding energy storage properties due to its characteristic electric field-induced antiferroelectric-to-ferroelectric (AFE-FE) phase transition.
Effect of Sn4+ doping on antiferroelectric and energy storage properties of PbHfO3 thin films prepared by a sol-gel process
The realization of energy storage and release of AFE capacitors is based on the reversible phase transition between antiferroelectric state and ferroelectric (FE) state 12, 13.
In a summary, this work provides an effective strategy to boost the energy storage performances of dielectric capacitors by constructing an antiferroelectric-like tri-layer
Here, we successfully achieve the room-temperature construction of the strongly competing ferrielectric and antiferroelectric state by strain-mediated phase separation in
Among all dielectrics, antiferroelectric (AFE) materials have attracted wide attention due to the excellent energy-storage performance. In this paper, PbHfO3 (PHO) AFE
Antiferroelectric thin-film capacitors with high energy-storage densities, low energy losses, and fast discharge times. ACS Appl Mater Interfaces 2015;7 (48):26381-6.
Antiferroelectric nano-heterostructures filler for improving energy storage performance of PVDF-based composite films Huayang Zhu a, Xiaohui Liu a, Hairui Bai a,
A recoverable energy density of 5.8 J/cm3 and an energy efficiency of 55.8% are obtained at 600 kV/cm, which demonstrates the great promise of the AgNbO 3 film for energy
Reversible field-induced phase transitions define antiferroelectric perovskite oxides and lay the foundation for high-energy storage density materials, required for future
A highly textured (111)-oriented Pb0.8Ba0.2ZrO3 (PBZ) relaxor thin film with the coexistence of antiferroelectric (AFE) and ferroelectric (FE) phases was prepared on a Pt/TiOx/SiO2/Si(100)
With the increasingly high requirements for wearable and flexible devices, traditional inorganic capacitors cannot meet the flexible demand of next-generation electronic devices. In this work, the energy
The values of recoverable energy storage density of 32.6 J/cm3 and efficiency of 88.1% are obtained for trilayer films annealed at 550 °C, meaning that the design of
A synergistic approach is proposed to achieve state-of-the-art energy storage performance in antiferroelectric thin films, involving the engineering of nanoscale structural heterogeneity to minimize hysteresis
Antiferroelectric (AFE) HfO 2 /ZrO 2 -based thin films have recently emerged as a potential candidate for high-performance energy storage capacitors in miniaturized power electronics.
First, to increase intrinsic energy storage, atomic-layer-deposited antiferroelectric HfO2–ZrO2 films are engineered near a field-driven ferroelectric phase transition to exhibit
In this study, epitaxial antiferroelectric PbHfO 3 films with different orientations are fabricated, in which remarkable anisotropies of polarization and energy storage properties
Dielectric properties and energy storage capability of antiferroelectric Pb0.92La0.08Zr0.95Ti0.05O3 film-on-foil capacitors - Volume 24 Issue 9
In this work, the energy storage property of all-inorganic flexible films has been systematically studied. PbZrO 3 (PZO) and Al 2 O 3 (AO) are selected as the antiferroelectric layer and insulating layer,
However, low energy-storage density for dielectric capacitors, inferior to other energy storage devices, such as batteries and electrochemical capacitors, has impeded their
Significantly improved energy storage properties and cycling stability in La-doped PbZrO3 antiferroelectric thin films by chemical pressure tailoring
The energy density required to charge the system (Win) is equal to the recovered energy density upon discharge (Wout) plus the loss (L). Energy densities are proportional to areas in P -ε diagrams. In the
Moreover, the recoverable energy density was 10.8 J/cm 3 at 600 kV/cm, which is 42% higher than that of the pure PZO films. The results demonstrate that adding an appropriate amount of noble metal
Antiferroelectric materials represented by PbZrO 3 (PZO) have excellent energy storage performance and are expected to be candidates for dielectric capacitors. It remains a challenge
We demonstrate a capacitor with high energy densities, low energy losses, fast discharge times, and high temperature stabilities, based on Pb0.97Y0.02[(Zr0.6Sn0.4)0.925Ti0.075]O3 (PYZST)
The energy density required to charge the system (Win) is equal to the recovered energy density upon discharge (Wout) plus the loss (L). Energy densities are proportional to
In this work, we try to increase the energy storage performance of PZO antiferroelectric films by adding NiO. The NiO-PZO composite thin films were deposited on
Antiferroelectric (AFE) HfO2/ZrO2-based thin films have recently emerged as a potential candidate for high-performance energy storage capacitors in miniaturized power electronics.
Antiferroelectrics have received blooming interests because of a wide range of potential applications in energy storage, solid-state cooling, thermal
Enhancement of energy storage and efficiency in antiferroelectric HfxZr1-xO2 supercapacitors through tailored phase engineering by oxygen vacancy Abstract: In this letter, the
This strategy presents new opportunities to manipulate polarization profiles and enhance energy storage performances in antiferroelectrics.
Antiferroelectric thin films have attracted blooming interest due to their potential application in energy storage areas. Pb (1−3x/2) La x HfO 3 (PLHO- x, x = 0–0.05) thin films were fabricated on Pt (111)/TiO 2
Zuhuang Chen; Exploring anti-ferroelectric thin films with high energy storage performance by moderating phase transition. 1 December 2024; 11 (4): 041410.
Antiferroelectric materials represented by PbZrO 3 (PZO) have excellent energy storage performance and are expected to be candidates for dielectric capacitors. It remains a challenge to further enhance the effective energy storage density and efficiency of PZO-based antiferroelectric films through domain engineering.
Anti-ferroelectric thin films are renowned for their signature double hysteresis loops and sheds light on the distinguished energy storage capabilities of dielectric capacitors in modern electronic devices.
Antiferroelectric (AFE) HfO 2 /ZrO 2 -based thin films have recently emerged as a potential candidate for high-performance energy storage capacitors in miniaturized power electronics.
Herein, by engineering the nanoscale heterogeneity to mitigate hysteresis and controlling orientation to enhance the polarization, the exceptional energy storage performance of antiferroelectric (Pb 0.97 La 0.02) (Zr 0.55 Sn 0.45)O 3 epitaxial thin films is demonstrated.
Antiferroelectric materials with double hysteresis loops are attractive for energy storage applications, which are becoming increasingly important for power electronics nowadays. Among them, AgNbO3 based lead-free ceramics have attracted intensive interest as one of promising environmental-friendly candidates.
